SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING AND PREPARATION METHOD OF THE SAME

摘要

PURPOSE: A slurry composition for chemical mechanical polishing is provided to ensure high polishing rate for a silicon oxide film and to enable the application to a shallow trench isolation process for removing an initial step of a silicon oxide film. CONSTITUTION: A slurry composition for chemical mechanical polishing comprises: abrasive particles including cerium oxide particles; one or more additives selected from the group consisting of picolinic acids, propionic acids, and formic acids; and aqueous solution including water. The zeta potential of the abrasive particle surface is 20-70 mV within a range of pH 3-6.