| 摘要 |
<p>PURPOSE: A voltage converter and a system including the same are provided to expand a sinker under silicide, thereby enhancing the conductivity between a P-body area with a sinker area and a high side FET source area. CONSTITUTION: A semiconductor die includes a circuit surface and a non-circuit surface. An LDMOS(Lateral Diffusion Metal Oxide Semiconductor) FET(98) is formed on the circuit surface of the semiconductor die. Source areas(114,115) of a high side LDMOS FET are formed on a P-body area(110). A low side LDMOS FET(96) is formed on the circuit surface of the semiconductor die. A drain area(122) of the low side LDMOS FET is electrically connected to the source areas of the high side LDMOS FET.</p> |
