MANUFACTURING METHOD OF NONVOLATILE MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a variable resistance memory device is provided to prevent the deterioration of electrical/physical features due to stress in a hot temperature process. CONSTITUTION: A heating electrode(110) is formed on a semiconductor substrate(100). The heating electrode includes nitride of metal whose atomic radius is larger than titanium. A variable resistance material film(120) is formed on the heating electrode. An upper electrode(130) is formed on the variable resistance material film. A barrier film prevents a material from being spread between the upper electrode and the variable resistance material film.