METHOD FOR CRYSTALLIZATING SILICON LAYER AND FABRICATING THIN FILM TRNASISTOR USING THE SAME

摘要

PURPOSE: A method for crystallizing silicon and method for manufacturing a thin film transistor are provided to crystallize a plurality of overlapped areas using two output irradiating units which scan two crystallizing areas, thereby reducing the crystallizing difference between adjacent crystallizing areas. CONSTITUTION: A crystallizing target layer is laminated. A substrate is divided into a plurality of crystallizing areas(126-1~126-n) and a plurality of overlapping areas. The crystallizing target layer is crystallized using a laser device with output irradiating units. Each overlapping area is scanned by the output irradiating units.