发明名称 BLANKMASK, METHOD OF FABRICATING THE SAME AND METHOD OF FABRICATING PHOTOMASK USING THE SAME
摘要 <p>PURPOSE: A blank mask and manufacturing method thereof, and method for manufacturing a photo mask using the same are provided to form a middle layer between a metal film and a resist film wherein the middle layer prevents ion spreading, thereby suppressing an acid neutralization reaction between the resist film and the metal film when the blank mask is exposed to light. CONSTITUTION: A metal film(20) is formed on a transparent substrate(11). The first layer film(21) and the second layer film(22) of the metal film essentially include molybdenum and silicon. A middle layer is formed on the metal film. The middle layer prevents ion spreading. A resist film is formed on the middle layer.</p>
申请公布号 KR20110058659(A) 申请公布日期 2011.06.01
申请号 KR20100100269 申请日期 2010.10.14
申请人 S&STECH CO., LTD. 发明人 NAM, KEE SOO;YANG, CHUL KYU;PARK, NAM SUN
分类号 G03F1/38;G03F1/50;H01L21/027 主分类号 G03F1/38
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