| 摘要 |
<p>PURPOSE: A pellicle for a liquid immersion lithography apparatus is provided to ensure high exposure light transmittance even if the value of the incident angle of a light source is increased. CONSTITUTION: A pellicle for a liquid immersion lithography apparatus is an ArF excimer laser in which a light source for exposure is 193 nm. When the incident angle on a pellicle film is 0°or more and 20°or less, light transmissivity is 99.3% or greater. The reflectivity of the pellicle for the liquid immersion lithography apparatus is 1.38-1.39 and the film thickness is 282nm - 284nm.</p> |
