发明名称 BITLINE PRECHARGE VOLTAGE GENERATOR, SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME AND METHOD OF TRIMMING BITLINE PRECHARGE VOLTGAE
摘要 PURPOSE: A bitline precharge voltage generator, a semiconductor memory device having the same and a method of trimming bitline precharge voltage are provided to minimize bitline precharge voltage distribution by trimming a precharge voltage level through fuse. CONSTITUTION: A bit line precharge voltage generator(10) comprises a bit line precharge voltage supply unit(100) The bit line precharge voltage generator comprises a leakage trimming unit(200) The bit line precharge voltage generator comprises a monitoring unit(300) The leakage trimming unit provides the leakage current to an output node. The bit line precharge voltage is located in the edge area of a dead zone. The bit line precharge voltage supply unit supplies bit line precharge voltage to the output node.
申请公布号 KR20110057314(A) 申请公布日期 2011.06.01
申请号 KR20090113664 申请日期 2009.11.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, KI HEUNG;JANG, SEONG JIN;KIM, MYEONG O;LEE, HONG JUN;LEE, TAE YOON
分类号 G11C11/4074;G11C5/14;G11C7/12;G11C11/4094 主分类号 G11C11/4074
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