发明名称 |
BITLINE PRECHARGE VOLTAGE GENERATOR, SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME AND METHOD OF TRIMMING BITLINE PRECHARGE VOLTGAE |
摘要 |
PURPOSE: A bitline precharge voltage generator, a semiconductor memory device having the same and a method of trimming bitline precharge voltage are provided to minimize bitline precharge voltage distribution by trimming a precharge voltage level through fuse. CONSTITUTION: A bit line precharge voltage generator(10) comprises a bit line precharge voltage supply unit(100) The bit line precharge voltage generator comprises a leakage trimming unit(200) The bit line precharge voltage generator comprises a monitoring unit(300) The leakage trimming unit provides the leakage current to an output node. The bit line precharge voltage is located in the edge area of a dead zone. The bit line precharge voltage supply unit supplies bit line precharge voltage to the output node.
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申请公布号 |
KR20110057314(A) |
申请公布日期 |
2011.06.01 |
申请号 |
KR20090113664 |
申请日期 |
2009.11.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, KI HEUNG;JANG, SEONG JIN;KIM, MYEONG O;LEE, HONG JUN;LEE, TAE YOON |
分类号 |
G11C11/4074;G11C5/14;G11C7/12;G11C11/4094 |
主分类号 |
G11C11/4074 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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