| 摘要 |
<p>A method and apparatus for the unusually high rate deposition of thin film materials on a stationary or continuous substrate. The method includes delivery of a pre-selected precursor intermediate to a deposition chamber and formation of a thin film material from the intermediate. The intermediate is formed outside of the deposition chamber and includes a metastable species such as a free radical. The intermediate is pre-selected to include a metastable species conducive to the formation of a thin film material having a low defect concentration. By forming a low defect concentration material, deposition rate is decoupled from material quality and heretofore unprecedented deposition rates are achieved. In one embodiment, the pre-selected precursor intermediate is SiH3. The method further includes combining the pre-selected precursor intermediate with a carrier gas, preferably in a deactivated state, where the carrier gas directs the transport of the pre-selected precursor intermediate to a substrate for deposition of the thin film material.</p> |
