Field effect transistor for detecting ionic material and method of detecting ionic material using the same

摘要

A field effect transistor for detecting ionic material and a method of detecting ionic material using the field effect transistor are provided. The field effect transistor for detecting ionic material includes a substrate (21) formed of a semiconductor material; a source region (22) and a drain region (23) spaced apart from each other in the substrate and doped with an opposite conductivity type to that of the substrate; a channel region (24) interposed between the source region and the drain region; an insulating layer (25) disposed on the channel region and formed of an electrically insulating material; a first reference electrode (26) disposed at an edge of the upper portion of the insulating layer; and a second reference electrode (27) disposed to be spaced apart from the insulating layer.