发明名称 A RAMP GENERATION CIRCUIT FOR USING A CURRENT SHUNT METHOD IN CMOS IMAGE SENSOR AND THE IMAGE SENSOR
摘要 PURPOSE: A ramp generation circuit using a current dividing method of a CMOS(Complementary Metal Oxide Semiconductor) image sensor is provided to reduce the generation of a noise by minimizing the switching of a digital circuit. CONSTITUTION: A ramp signal generating circuit(120) comprises a reference power setting unit(220) and a ramp signal generating unit(240). The reference power setting unit sets a reference power level. The ramp signal generating unit charges a previously prepared capacitive device through the reference power. ramp signal generating unit discharges the capacitive element by adjusting the amount of a current which is delivered to a capacitive element. The ramp signal generating unit outputs a signal which representing the progress of the discharge change as a ramp signal.
申请公布号 KR20110057678(A) 申请公布日期 2011.06.01
申请号 KR20090114170 申请日期 2009.11.24
申请人 ZEEANN CO., LTD. 发明人 TAE SONG CHUNG
分类号 H04N5/335 主分类号 H04N5/335
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