METHOD OF FORMING INSULATING LAYER AND METHOD OF MANUFACTURING TRANSISTOR USING THE SAME

摘要

PURPOSE: A method for forming an insulation layer and a method for forming a transistor using the same are provided to reduce a leakage current and maintain a thin equivalent oxide thickness by processing a preliminary insulation layer including silicon oxide with a plasma nitrification using NH3. CONSTITUTION: A preliminary insulation layer(12) with silicon oxide is formed on a substrate(10) made of Si. Reactive gas including NH3 is provided to the preliminary insulation layer. Nitrogen radical and hydrogen radical are made by using plasma in the NH3 gas. The hydrogen radical is combined with the oxygen of the preliminary insulation layer and the nitrogen radical is combined with the silicon oxide. An insulation layer with OH and SiON is formed by using the preliminary insulation layer.