| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem that a leakage current is generated on a boarder with an FD unit owing to a GIDL as miniaturization of a device is developed that strengthens an electric field over the boarder between a P well and an N<SP>+</SP>layer. SOLUTION: In an MOS type solid state imaging apparatus, a gate electrode of a transfer transistor is driven at three values (in this example, -2V/-1V/3V). The transfer transistor is driven at a midpoint potential of a negative potential simultaneously with or previously to trailing of a reset pulse RST, thereby suppressing influence of the leakage current owing to the GIDL on the pixel signal. COPYRIGHT: (C)2007,JPO&INPIT |
