发明名称 MOTHERBOARD, MOTHERBOARD MANUFACTURING METHOD AND DEVICE BOARD
摘要 <p>The present invention provides a motherboard having panel substrates efficiently arranged thereon and a reduced wasted substrate region, a method for producing the motherboard, and a device substrate comprising the panel substrates formed on the motherboard. The motherboard of the present invention comprises a plurality of panel substrates, wherein the motherboard has a silicon thin film formed on a principal surface thereof, each of the panel substrates has a transistor forming region and a marginal region, the transistor forming region is formed by polycrystallizing the silicon thin film, the marginal region is provided on an outer edge of each of the panel substrates, and at least one of the panel substrates has the marginal region including a region with a silicon thin film which has a crystal profile different from a crystal profile of a silicon thin film in the transistor forming region.</p>
申请公布号 EP2328169(A1) 申请公布日期 2011.06.01
申请号 EP20090814364 申请日期 2009.06.09
申请人 SHARP KABUSHIKI KAISHA 发明人 FUJIKAWA, YOHSUKE
分类号 H01L21/20;H01L21/02;H01L21/336;H01L29/786 主分类号 H01L21/20
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