发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
<p>A semiconductor device according to this invention is provided with a MOS transistor of at least one type, wherein the MOS transistor has a semiconductor layer (SOI layer) provided on an SOI substrate and a gate electrode provided on the SOI layer and is normally off by setting the thickness of the SOI layer so that the thickness of a depletion layer caused by a work function difference between the gate electrode and the SOI layer becomes greater than that of the SOI layer.</p> |
申请公布号 |
EP1906440(A4) |
申请公布日期 |
2011.06.01 |
申请号 |
EP20060757382 |
申请日期 |
2006.06.16 |
申请人 |
TOHOKU UNIVERSITY;FOUNDATION FOR ADVANCEMENT OF INTERNATIONAL SCIENCE |
发明人 |
OHMI, TADAHIRO;TERAMOTO, AKINOBU |
分类号 |
H01L21/336;H01L21/8238;H01L27/08;H01L27/092;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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