| 摘要 |
<p>PURPOSE: A method and a device for simultaneously monitoring residual stress and annealing temperature are provided to secure CCL, PCB, and FPCB proper for fine pattern formation by heating a specimen up to the target residual strength and maintaining the optimum temperature for minimizing the grain size. CONSTITUTION: A method for simultaneously monitoring residual stress and annealing temperature is as follows. Recrystallization activation energy and crystal growth activation energy of a specimen being heat-treated are inputted to a controller. The target residual stress and grain size of the specimen are set and inputted to the controller. An accumulated energy value used for residual stress removal and an accumulated energy value used for crystal growth are calculated using the internal temperature of a furnace measured in real time, recrystallization activation energy, and crystal growth activation energy. Modeling experiments are implemented to obtain the grain size and residual stress values of the specimen under various temperature variables, and coefficients of multiple regression including temperature, residual stress, and grain size are input to the controller. The current residual stress and grain size of the specimen, which are synchronized with the accumulated recrystallization activation energy and crystal growth activation energy monitored in real time, are outputted to the controller in real time.</p> |
