| 摘要 |
A vertical cavity surface emitting laser diode (VCSEL) is disclosed, which reduces the light scattering by the step formed at the interface between the dielectric DBR and the semiconductor that reflects the mesa shape of the tunnel junction. The dielectric DBR of the invention includes a plurality of first films with relatively smaller refractive index and a plurality of second films with relatively larger refractive index. These first and second films are alternately stacked to each other to cause the periodic structure of the refractive indices. The VCSEL of the invention, different from the conventional device, provides the dielectric film with relatively larger refractive index that directly comes in contact with the semiconductor to set the node of the optical standing wave at the interface between the dielectric DBR and the semiconductor.
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