发明名称 APPRATUS FOR TREATING SUBSTRATE
摘要 PURPOSE: An apparatus for treating a substrate is provided to supply a reaction gas to a reaction chamber evenly by installing a gas injection unit including first and second injection nozzles. CONSTITUTION: In an apparatus for treating a substrate, a reaction chamber(112) offers a reaction space which is formed by a body(112b) and a lid(112a). A plurality of plasma source electrodes(114) are formed on the lid corresponding to reaction space. A plurality of protrusions(134) are formed on the lid between a plurality of plasma source electrodes. A feeding line(118) is connected to a plurality of plasma source electrodes. A gas injection unit(124) is installed in a plurality of plasma source electrodes and protrusions.
申请公布号 KR20110056788(A) 申请公布日期 2011.05.31
申请号 KR20090113257 申请日期 2009.11.23
申请人 JUSUNG ENGINEERING CO., LTD. 发明人 SONG, MYUNG GON;LEE, JUNG RAK;DO, JAE CHUL;JEON, BU IL
分类号 H01L21/205;H01L21/3065;H01L31/04 主分类号 H01L21/205
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