发明名称 |
APPRATUS FOR TREATING SUBSTRATE |
摘要 |
PURPOSE: An apparatus for treating a substrate is provided to supply a reaction gas to a reaction chamber evenly by installing a gas injection unit including first and second injection nozzles. CONSTITUTION: In an apparatus for treating a substrate, a reaction chamber(112) offers a reaction space which is formed by a body(112b) and a lid(112a). A plurality of plasma source electrodes(114) are formed on the lid corresponding to reaction space. A plurality of protrusions(134) are formed on the lid between a plurality of plasma source electrodes. A feeding line(118) is connected to a plurality of plasma source electrodes. A gas injection unit(124) is installed in a plurality of plasma source electrodes and protrusions. |
申请公布号 |
KR20110056788(A) |
申请公布日期 |
2011.05.31 |
申请号 |
KR20090113257 |
申请日期 |
2009.11.23 |
申请人 |
JUSUNG ENGINEERING CO., LTD. |
发明人 |
SONG, MYUNG GON;LEE, JUNG RAK;DO, JAE CHUL;JEON, BU IL |
分类号 |
H01L21/205;H01L21/3065;H01L31/04 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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