发明名称 |
Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods |
摘要 |
An integrated circuit memory device may include an integrated circuit substrate, and a multi-bit memory cell on the integrated circuit substrate. The multi-bit memory cell may be configured to store a first bit of data by changing a first characteristic of the multi-bit memory cell and to store a second bit of data by changing a second characteristic of the multi-bit memory cell. Moreover, the first and second characteristics may be different. Related methods are also discussed.
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申请公布号 |
US7952914(B2) |
申请公布日期 |
2011.05.31 |
申请号 |
US20070804327 |
申请日期 |
2007.05.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAEK IN-GYU;LEE JANG-EUN;OH SE-CHUNG;NAM KYUNG-TAE;JEONG JUN-HO |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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