发明名称 Method of fabricating electronic device using nanowires
摘要 A method of fabricating an electronic device using nanowires, minimizing the number of E-beam processing steps and thus improving a yield, includes the steps of: forming electrodes on a substrate; depositing a plurality of nanowires on the substrate including the electrodes; capturing an image of the substrate including the nanowires and the electrodes; drawing virtual connection lines for connecting the nanowires with the electrodes on the image using an electrode pattern simulated through a computer program, after capturing the image; coating an E-beam photoresist on the substrate; removing the photoresist from regions corresponding to the virtual connection lines and the electrode pattern using E-beam lithography; depositing a metal layer on the substrate after removing the photoresist from the regions of the virtual connection lines; and removing remaining photoresist from the substrate using a lift-off process.
申请公布号 US7951698(B2) 申请公布日期 2011.05.31
申请号 US20070947139 申请日期 2007.11.29
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE;KOREA UNIVERSITY INDUSTRIAL & ACADEMIC COLLABORATION FOUNDATION 发明人 MOON SEUNG EON;KIM EUN KYOUNG;LEE HONG YEOL;PARK JONG HYURK;PARK KANG HO;KIM JONG DAE;PARK SO JEONG;KIM GYU TAE
分类号 H01L45/00;H01L21/00 主分类号 H01L45/00
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