发明名称 |
Method of fabricating electronic device using nanowires |
摘要 |
A method of fabricating an electronic device using nanowires, minimizing the number of E-beam processing steps and thus improving a yield, includes the steps of: forming electrodes on a substrate; depositing a plurality of nanowires on the substrate including the electrodes; capturing an image of the substrate including the nanowires and the electrodes; drawing virtual connection lines for connecting the nanowires with the electrodes on the image using an electrode pattern simulated through a computer program, after capturing the image; coating an E-beam photoresist on the substrate; removing the photoresist from regions corresponding to the virtual connection lines and the electrode pattern using E-beam lithography; depositing a metal layer on the substrate after removing the photoresist from the regions of the virtual connection lines; and removing remaining photoresist from the substrate using a lift-off process.
|
申请公布号 |
US7951698(B2) |
申请公布日期 |
2011.05.31 |
申请号 |
US20070947139 |
申请日期 |
2007.11.29 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE;KOREA UNIVERSITY INDUSTRIAL & ACADEMIC COLLABORATION FOUNDATION |
发明人 |
MOON SEUNG EON;KIM EUN KYOUNG;LEE HONG YEOL;PARK JONG HYURK;PARK KANG HO;KIM JONG DAE;PARK SO JEONG;KIM GYU TAE |
分类号 |
H01L45/00;H01L21/00 |
主分类号 |
H01L45/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|