发明名称 |
Laterally diffused MOS transistor having N+ source contact to N-doped substrate |
摘要 |
Reduced source resistance is realized in a laterally diffused MOS transistor by fabricating the transistor in a P-doped epitaxial layer on an N-doped semiconductor substrate and using a trench contact for ohmically connecting the N-doped source region to the N-doped substrate.
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申请公布号 |
USRE42403(E1) |
申请公布日期 |
2011.05.31 |
申请号 |
US20080139020 |
申请日期 |
2008.06.13 |
申请人 |
ROVEC ACQUISITIONS LTD., LLC |
发明人 |
BABCOCK JEFF;DARMAWAN JOHAN AGUS;MASON JOHN |
分类号 |
H01L29/76;H01L21/336;H01L29/10;H01L29/40;H01L29/417;H01L29/78 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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