发明名称 Edge removal of silicon-on-insulator transfer wafer
摘要 A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface of the wafer is exposed to an etchant to preferentially etch away the circumferential lip, while the circular recess is masked by the spin-on-glass. The spin-on glass is removed, and the front surface of the transfer wafer is polished. Other methods of removing the circumferential lip include applying a higher pressure to the circumferential lip in a polishing process, and directing a pressurized fluid jet at the base of the circumferential lip.
申请公布号 US7951718(B2) 申请公布日期 2011.05.31
申请号 US20080033727 申请日期 2008.02.19
申请人 APPLIED MATERIALS, INC. 发明人 DONOHOE RAYMOND JOHN;VEPA KRISHNA;MILLER PAUL V.;RAYANDAYAN RONALD;WANG HONG
分类号 H01L21/302 主分类号 H01L21/302
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