发明名称 Non-volatile semiconductor storage system
摘要 There is provided a non-volatile memory having electrically rewritable non-volatile memory cells arranged therein. A controller controls operation at the non-volatile memory. The non-volatile memory comprises a status output section configured to output status information indicating a status of read operation, write operation or erase operation in the non-volatile memory cell. The controller comprises a control signal generating section configured to output a control signal for a certain operation in the non-volatile memory, and a control signal switching section configured to instruct the control signal generating section to switch the control signal based on the status information.
申请公布号 US7952958(B2) 申请公布日期 2011.05.31
申请号 US20090507366 申请日期 2009.07.22
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 YANAGIDAIRA KOSUKE;SUZUKI TOSHIHIRO;TOKIWA NAOYA
分类号 G11C8/00 主分类号 G11C8/00
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