| 摘要 |
A solid state imaging device comprises: a semiconductor substrate; and a plurality of photoelectric conversion elements arranged on the semiconductor substrate in a row direction and a column direction substantially perpendicular to the row direction, wherein said plurality of photoelectric conversion elements are divided to first and second groups, when positions of the photoelectric conversion elements of the second group are considered as reference positions, the photoelectric conversion elements of the first group are disposed at positions shifted in a given direction from the reference positions in such a manner that each of the photoelectric conversion elements of the first group adjoins the each of the photoelectric conversion elements of the second group, spectral filters are respectively provided upwardly of light receiving surfaces of the photoelectric conversion elements of the first group, the spectral filters comprising three or more kinds of spectral filters respectively transmitting different color components, and luminance filters are respectively provided upwardly of light receiving surfaces of the photoelectric conversion elements of the second group, the luminance filters each having a spectral characteristic correlated with luminance component of the light.
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