发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
A method for improving the reliability and yield of a thin film transistor by controlling the crystallinity thereof. The method comprises the steps of forming a gate electrode on an island amorphous silicon film, injecting an impurity using the gate electrode as a mask, forming a coating film containing at least one of nickel, iron, cobalt, platinum and palladium so that it adheres to parts of the impurity regions, and annealing it at a temperature lower than the crystallization temperature of pure amorphous silicon to advance the crystallization starting therefrom and to crystallize the impurity regions and channel forming region.
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申请公布号 |
US7952097(B2) |
申请公布日期 |
2011.05.31 |
申请号 |
US20010917633 |
申请日期 |
2001.07.31 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;TAKEMURA YASUHIKO;ZHANG HONGYONG |
分类号 |
H01L29/04;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;H01L31/036 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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