| 摘要 |
A method capable of stably manufacturing a SiC single crystal in the form of a thin film or a bulk crystal having a low carrier density of at most 5 x 10 17 /cm 3 and preferably less than 1 x 10 17 /cm 3 and which is suitable for use in various devices by liquid phase growth using a SiC solution in which the solvent is a melt of a Si alloy employs a Si alloy having a composition which is expressed by Si x Cr y Ti z wherein x, y, and z (each in atomic percent) satisfy 0.50 < x < 0.68 , 0.08 < y < 0.35 , and 0.08 < z < 0.35 , or 0.40 < x ‰¤ 0.50 , 0.15 < y < 0.40 , and 0.15 < z < 0.35. x, y, and z preferably satisfy 0.53 < x < 0.65, 0.1 < y < 0.3, and 0.1 < z < 0.3. |
