| 摘要 |
<p>PURPOSE: An array substrate and a method for fabricating the same are provided to improve the characteristics of a thin film transistor by preventing the occurrence of damage on a surface of an active layer. CONSTITUTION: An array substrate comprises: an array substrate(201) in which a front plane is made of an inorganic insulating material; a gate insulating film and a gate electrode which are sequentially laminated on the buffer layer; a main active layer(215) which is made of pure poly silicon and has a groove; a subsidiary active layer(218) which is made of pure amorphous silicon material and has a hole corresponding to the groove; and an interlayer insulating film(222) which is formed on the front plane of the substrate.</p> |
