发明名称 Method of manufacturing semiconductor device
摘要 A method of manufacturing a semiconductor device includes a first step of forming solder film on metal posts of a mother chip, a second step of forming solder balls after the first step by printing a solder paste on the mother chip and heating the mother chip so that the solder paste is ref lowed, a third step of bonding the metal posts of the mother chip and metal posts of a daughter chip to each other in a thermocompression bonding manner by means of the solder film after the second step, and a fourth step of flip-chip-connecting the mother chip on a circuit substrate by using the solder balls. In the second step, the mother chip is heated in a nitrogen atmosphere in which the oxygen concentration is 500 ppm or less.
申请公布号 US7951699(B2) 申请公布日期 2011.05.31
申请号 US20060637097 申请日期 2006.12.12
申请人 RENESAS ELECTRONICS CORPORATION 发明人 IWASAKI TOSHIHIRO;IDAKA SHIORI;HATANAKA YASUMICHI
分类号 H01L21/603;H01L33/62 主分类号 H01L21/603
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