发明名称 Self-topcoating photoresist for photolithography
摘要 Photoresist additive polymers and photoresist formulations that can be used in immersion lithography without the use of an additional topcoat. The resist compositions include a photoresist polymer, at least one photoacid generator, a solvent; and a photoresist additive polymer. Also a method of forming using photoresist formulations including photoresist additive polymers.
申请公布号 US7951524(B2) 申请公布日期 2011.05.31
申请号 US20080023108 申请日期 2008.01.31
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION;JSR MICRO INC. 发明人 ALLEN ROBERT;BROCK PHILLIP;KUSUMOTO SHIRO;NISHIMURA YUKIO;SANDERS DANIEL P.;SLEZAK MARK STEVEN;SOORIYAKUMARAN RATNAM;SUNDBERG LINDA K.;TRUNG HOA;WALLRAFF GREGORY M.
分类号 G03F7/039;G03F7/20;G03F7/30;G03F7/36;G03F7/38 主分类号 G03F7/039
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