发明名称 |
Self-topcoating photoresist for photolithography |
摘要 |
Photoresist additive polymers and photoresist formulations that can be used in immersion lithography without the use of an additional topcoat. The resist compositions include a photoresist polymer, at least one photoacid generator, a solvent; and a photoresist additive polymer. Also a method of forming using photoresist formulations including photoresist additive polymers.
|
申请公布号 |
US7951524(B2) |
申请公布日期 |
2011.05.31 |
申请号 |
US20080023108 |
申请日期 |
2008.01.31 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;JSR MICRO INC. |
发明人 |
ALLEN ROBERT;BROCK PHILLIP;KUSUMOTO SHIRO;NISHIMURA YUKIO;SANDERS DANIEL P.;SLEZAK MARK STEVEN;SOORIYAKUMARAN RATNAM;SUNDBERG LINDA K.;TRUNG HOA;WALLRAFF GREGORY M. |
分类号 |
G03F7/039;G03F7/20;G03F7/30;G03F7/36;G03F7/38 |
主分类号 |
G03F7/039 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|