| 摘要 |
A double exposure semiconductor process is provided for improved process margin at reduced feature sizes. During a first processing sequence, features defining non-critical dimensions of a polysilicon interconnect structure are formed, while other portions of the polysilicon layer are left un-processed. During a second processing sequence, features that define the critical dimensions of the polysilicon interconnect structure are formed without the need to execute a photoresist trimming procedure. Accordingly, only an etch process is executed, which provides higher resolution processing to create the critical dimensions needed during the second processing sequence.
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