发明名称 Apparatus of inspecting defect in semiconductor and method of the same
摘要 When size of a defect on an increasingly miniaturized pattern is obtained by defect inspection apparatus in the related art, a value is inconveniently given, which is different from a measured value of the same defect by SEM. Thus, a dimension value of a defect detected by defect inspection apparatus needs to be accurately calculated to be approximated to a value measured by SEM. To this end, size of the defect detected by the defect inspection apparatus is corrected depending on feature quantity or type of the defect, thereby defect size can be accurately calculated.
申请公布号 US7952699(B2) 申请公布日期 2011.05.31
申请号 US20100827555 申请日期 2010.06.30
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 HAMAMATSU AKIRA;MAEDA SHUNJI;SHIBUYA HISAE
分类号 G01N21/88;G01B11/00;G01B11/02;G01N21/956;H01L21/66 主分类号 G01N21/88
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