| 摘要 |
<p>A method for producing a semiconductor wafer, comprising: (a) rounding of the edge of the semiconductor wafer sliced from a crystal, by means of a grinding disk containing abrasives having an average grain size of 20.0 - 60.0μm; (b) simultaneous double-side material-removing processing of the semiconductor wafer between two rotating ring-shaped working disks, wherein each working disk comprises a working layer containing abrasives having an average size of 5.0 - 20.0μm; (c) simultaneous double-side material-removing processing of the semiconductor wafer between two rotating ring-shaped working disks, wherein each working disk comprises a working layer containing abrasives having an average size of 0.5 - 15.0μm, wherein the grain size is less than the grain size used in step a); (d) rounding of the edge of the semiconductor wafer by means of a grinding disk containing abrasives having an average grain size of 1.0μm up to 20.0μm, wherein the grain size is less than the grain size used in step a); (e) treatment of both sides of the semiconductor wafer with an etching medium in conjunction with a material removal of not more than 1μm per side of the semiconductor wafer; (f) polishing of at least one side of the semiconductor wafer using a polishing pad containing abrasives having an average grain size of 0.1 - 1.0μm; (g) polishing of the edge of the semiconductor wafer; (h) chemical mechanical polishing (CMP) of at least the front side.</p> |
