PLASMA ENHANCED CYCLIC DEPOSITION METHOD OF METAL SILICON NITRIDE FILM

摘要

PURPOSE: A plasma-enhanced cyclic deposition method of a metal silicon nitride film is provided to enable the metal silicon nitride film to be formed using a cyclic deposition method under a plasma atmosphere. CONSTITUTION: A plasma-enhanced cyclic deposition method of a metal silicon nitride film comprises next steps. Metallic amid in a steam state is put into a reactor under a plasma atmosphere and makes compound deposited on a heated substrate. Non-reactive metallic amid is removed by purge. Silicon precursor in a steam state is put into a reactor under a plasma atmosphere and couples the deposited metallic amid to the silicon precursor. Non-reactive silicon precursor is removed by purge.