| 摘要 |
<p>A method for processing a semiconductor wafer, wherein at least one grinding tool and a side surface of at least one semiconductor wafer are delivered to one another, whereby material is removed from the at least one semiconductor wafer, wherein a liquid medium having a viscosity of at least 3.10-3 N/m2.s and at most 100.10-3 N/m2.s is situated between the at least one grinding tool and the at least one semiconductor wafer, while the at least one grinding tool and the at least one semiconductor wafer are removed from one another in order to end the processing operation. No Drawings</p> |
