CONTROL OF WORD LINE TRANSISTOR SIGNAL LEVEL FOR READING AND RECORDING IN MAGNETORESISTIVE RAM WITH TRANSFER OF SPIN TORQUE

摘要

FIELD: information technologies. ^ SUBSTANCE: systems, circuits and methods are disclosed to control word line voltage in a word line transistor in a magnetoresistive RAM with transfer of spin torque (STT-MRAM). The first voltage may be sent to a word line transistor for recording operations. The second voltage, which is less than the first voltage, may be sent to a word line transistor during reading operations. ^ EFFECT: control of WL transistor signal level for reading and recording operations. ^ 20 cl, 12 dwg