发明名称 |
METHOD OF PRODUCING A LATERALLY DOPED CHANNEL |
摘要 |
A lateral doped channel. A first doping material is implanted substantially vertically into a region adjacent to a gate structure. A diffusion process diffuses the first doping material into a channel region beneath the gate structure. A second doping material is implanted substantially vertically into the region adjacent to a gate structure. The second implantation forms source/drain regions and may terminate the channel region. The channel region thus comprises a laterally non-uniform doping profile which beneficially mitigates the short channel effect and is highly advantageous as compensation for manufacturing process variations in channel length. |
申请公布号 |
KR101037775(B1) |
申请公布日期 |
2011.05.27 |
申请号 |
KR20057008789 |
申请日期 |
2003.07.10 |
申请人 |
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发明人 |
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分类号 |
H01L27/115;H01L21/265;H01L21/336;H01L21/8239;H01L21/8246;H01L21/8247;H01L27/105;H01L29/10 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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