发明名称 SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE
摘要 PURPOSE: A solid-state imaging device and a method of manufacturing a solid-state imaging device are provided to prevent contact resistance between a contact layer and an electrode layer by forming the contact layer and the electrode layer with same material. CONSTITUTION: In a solid-state imaging device and a method of manufacturing a solid-state imaging device, a photo diode used as an optical receiving sensor is formed within a silicon layer(2). A planarization layer(5) is formed on the silicon layer to form a color filter(6). An on-chip lens(7) is formed on the color filter. An insulating layer(3) and a bearing substrate(8) are fixed by adhesive layers(9,10) formed on the each surface thereof. An insulating layer and the insulating layer of the pad unit include an insulating layer made of same material.
申请公布号 KR20110056371(A) 申请公布日期 2011.05.27
申请号 KR20110046412 申请日期 2011.05.17
申请人 SONY CORPORATION 发明人 YAMAMOTO YUICHI;IWAMOTO HAYATO
分类号 H01L27/14;H01L27/146;H01L27/148;H01L31/10 主分类号 H01L27/14
代理机构 代理人
主权项
地址