发明名称 |
SEMICONDUCTOR DEVICE WITH HETEROJUNCTIONS AND AN INTERDIGITATED STRUCTURE |
摘要 |
A Semiconductor device including, on at least one surface of a layer made of a crystalline semiconductor material of a certain type of conductivity, a layer made of an amorphous semiconductor material, doped with a type of conductivity opposite to the type of conductivity of the crystalline semiconductor material layer, characterized in that the concentration of the doping elements in the amorphous semiconductor layer varies gradually.
|
申请公布号 |
US2011120541(A1) |
申请公布日期 |
2011.05.26 |
申请号 |
US201113017397 |
申请日期 |
2011.01.31 |
申请人 |
ROCA I CABARROCAS PERE;DAMON-LACOSTE JEROME |
发明人 |
ROCA I. CABARROCAS PERE;DAMON-LACOSTE JEROME |
分类号 |
H01L31/0376;H01L31/0368;H01L31/0745;H01L31/0747;H01L31/18 |
主分类号 |
H01L31/0376 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|