发明名称 |
BITLINE PRECHARGE VOLTAGE GENERATOR, SEMICONDUCTOR MEMORY DEVICE COMPRISING SAME, AND METHOD OF TRIMMING BITLINE PRECHARGE VOLTAGE |
摘要 |
A bitline precharge voltage generator comprises a leakage trimming unit and a bitline precharge voltage providing unit. The leakage trimming unit applies a leakage current to an output node to place a bitline precharge voltage at an edge of a dead zone. The bitline precharge voltage providing unit provides the bitline precharge voltage to the output node, and sets the bitline precharge voltage to a target level. The bitline precharge voltage generator generates the bitline precharge voltage having a distribution including the dead zone.
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申请公布号 |
US2011122711(A1) |
申请公布日期 |
2011.05.26 |
申请号 |
US20100904302 |
申请日期 |
2010.10.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM KI-HEUNG;JANG SEONG-JIN;KIM MYEONG-O;LEE HONG-JUN;LEE TAE-YOON |
分类号 |
G11C5/14;G11C7/00 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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