发明名称 BITLINE PRECHARGE VOLTAGE GENERATOR, SEMICONDUCTOR MEMORY DEVICE COMPRISING SAME, AND METHOD OF TRIMMING BITLINE PRECHARGE VOLTAGE
摘要 A bitline precharge voltage generator comprises a leakage trimming unit and a bitline precharge voltage providing unit. The leakage trimming unit applies a leakage current to an output node to place a bitline precharge voltage at an edge of a dead zone. The bitline precharge voltage providing unit provides the bitline precharge voltage to the output node, and sets the bitline precharge voltage to a target level. The bitline precharge voltage generator generates the bitline precharge voltage having a distribution including the dead zone.
申请公布号 US2011122711(A1) 申请公布日期 2011.05.26
申请号 US20100904302 申请日期 2010.10.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM KI-HEUNG;JANG SEONG-JIN;KIM MYEONG-O;LEE HONG-JUN;LEE TAE-YOON
分类号 G11C5/14;G11C7/00 主分类号 G11C5/14
代理机构 代理人
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