| 摘要 |
Improved methods and systems for inspection imaging for holographic or interferometric semiconductor test and evaluation through all phases of manufacture. Specifically, systems and methods for extending the range of optical holographic interferometric inspection for evaluating microelectronic devices and the interplay of electromagnetic signals and dynamic stresses to the semiconductor material are provided in which an enhanced imaging method provides continuous and varying magnification over a plurality of interleaved optical pathways and imaging devices. Analysis of one or more holographic interference patterns displays internal and external stresses and the various effects of such stresses upon the operating characteristics of features within the feature or interior structures or internal surfaces of the semiconductor material or wafer.
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