| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can suppress a power breakdown. SOLUTION: In a base contact region 14 which is set on the surface of a base region 12, a base electrode 15 is bonded to the base region 12. At the lower part of a boundary part of the base contact region 14, an N-type region 21 having the same conductivity type as an emitter region 13 is formed in such a manner as to surround the base contact region 14. In other words, a PN-type parasitic diode is formed by a P-type base region 12 and the N-type region 21 at the lower part of the boundary part of the base contact region 14. COPYRIGHT: (C)2011,JPO&INPIT
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