发明名称 |
E/P DURABILITY BY USING A SUB-RANGE OF A FULL PROGRAMMING RANGE |
摘要 |
A NAND flash memory system is controlled by determining whether to change a value of a voltage threshold. The voltage threshold is associated with an erase operation to a portion of a NAND flash memory chip. In the event it is determined to change the value of the voltage threshold, the value of the voltage threshold is changed and the changed value of the voltage threshold and an identifier associated with the portion of the NAND flash memory chip is stored. |
申请公布号 |
US2011125959(A1) |
申请公布日期 |
2011.05.26 |
申请号 |
US201113018152 |
申请日期 |
2011.01.31 |
申请人 |
LINK_A_MEDIA DEVICES CORPORATION |
发明人 |
YEUNG KWOK W.;LEE MENG-KUN |
分类号 |
G06F12/02 |
主分类号 |
G06F12/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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