发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To reduce a frequency of occurrence of erroneous readout while suppressing the increase of a circuit scale even when a failure of a bit cell after writing occurs at random. <P>SOLUTION: The same data is written into a plurality of bit cells BC having the same bit lines BL<0> to BL<m-1> and different word lines WL<0> to WL<n-1>, and an address buffer 1 instructs to a row decoder 2 at the readout so that the data is simultaneously read out from the plurality of bit cells BC having the same bit lines BL<0> to BL<m-1> and different word lines WL<0> to WL<n-1>. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011103154(A) 申请公布日期 2011.05.26
申请号 JP20090257341 申请日期 2009.11.10
申请人 TOSHIBA CORP 发明人 HAYAKAWA MASAYUKI
分类号 G11C17/18;G11C16/06;G11C17/14 主分类号 G11C17/18
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