TRANSFER MASK, METHOD FOR MANUFACTURING TRANSFER MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a transfer mask improved in the light resistance of a translucent film or a light-shielding film containing a transition metal and silicon against exposure light at a wavelength of 200 nm or less.

SOLUTION: The transfer mask has a transfer pattern formed in a thin film for pattern formation provided on a light-transmitting substrate. Exposure light at a wavelength of 200 nm or less is used for the transfer mask. The thin film for pattern formation is formed from a material that contains silicon and a transition metal other than chromium, and the chromium content in the film is less than 1.0×1018atoms/cm3.

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