| 摘要 |
PROBLEM TO BE SOLVED: To provide a thyristor securing reverse breakdown-strength characteristics by lowering an on-state voltage V<SB>T</SB>while the size of the thyristor remains equal to that of conventional devices. SOLUTION: The thyristor 100 includes: a p-type semiconductor layer 3 including projections including parts formed in sizes thicker than the other part on the p-type semiconductor layer 2 connected to an anode electrode 1 on a surface; the p-type semiconductor layers 101 having an impurity concentration lower than the p-type semiconductor layer 3 in an n-type semiconductor layer 4 and on the top faces of the projections of the p-type semiconductor layer 3; and the p-type semiconductor layer 102 having the impurity concentration lower than the p-type semiconductor layer 3 in the n-type semiconductor layer 4 and on the top face excepting the projections of the p-type semiconductor layer 3. The thyristor further includes: the p-type semiconductor layer 6 in the n-type semiconductor layer 4; and the n-type semiconductor layer 7 connected to a cathode electrode 8 on the surface and the p-type semiconductor layer 10 connected to a gate electrode 9 in the p-type semiconductor layer 6. COPYRIGHT: (C)2011,JPO&INPIT
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