发明名称 |
P-TYPE LAYER FOR A III-NITRIDE LIGHT EMITTING DEVICE |
摘要 |
A semiconductor structure includes a light emitting region, a p-type region disposed on a first side of the light emitting region, and an n-type region disposed on a second side of the light emitting region. At least 10% of a thickness of the semiconductor structure on the first side of the light emitting region comprises indium. Some examples of such a semiconductor light emitting device may be formed by growing an n-type region, growing a p-type region, and growing a light emitting layer disposed between the n-type region and the p-type region. The difference in temperature between the growth temperature of a part of the n-type region and the growth temperature of a part of the p-type region is at least 140° C.
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申请公布号 |
US2011121358(A1) |
申请公布日期 |
2011.05.26 |
申请号 |
US201113017074 |
申请日期 |
2011.01.31 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;PHILIPS LUMILEDS LIGHTING COMPANY, LLC |
发明人 |
KOBAYASHI JUNKO;GOETZ WERNER K.;MUNKHOLM ANNELI |
分类号 |
H01L33/32;H01L33/00;H01L33/08;H01L33/30 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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