| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a memory element being simple as compared with a conventional manufacturing process. SOLUTION: A thin film 11 of a material which is non-magnetism and which includes the prescribed viscosity is provided at a surface of a substrate 3 of a memory element 1, a transfer pattern MA provided in a type M and formed in fine irregularities is transferred to this thin film 11, the thin film 11 in which fine transfer pattern is transferred is cured, a thin film 7A of a magnetic material is provided at the top of the cured thin film 11(uneven film 5), the thin film 7A of the magnetic material is covered by a thin film 9 of a magnetic material, and part of the thin film 9 of non-magnetism is removed until a magnetic material 7A is exposed. COPYRIGHT: (C)2011,JPO&INPIT |
