NOVEL WET ETCHING AGENT FOR II-VI SEMICONDUCTORS AND METHOD
摘要
A novel etching agent for etching II-VI semiconductors is provided. The etching agent includes an aqueous solution of potassium permanganate and phosphoric acid. This etching solution can etch II-VI semiconductors at a rapid rate but tend to be much less reactive with III-V semiconductors. The provided agent can be used in a method for etching II-VI semiconductors.
申请公布号
WO2011062835(A2)
申请公布日期
2011.05.26
申请号
WO2010US56359
申请日期
2010.11.11
申请人
3M INNOVATIVE PROPERTIES COMPANY;MAO, GUOPING,;BENCH, MICHAEL W.,;QIU, ZAI-MING,;SUN, XIAOGUANG,
发明人
MAO, GUOPING,;BENCH, MICHAEL W.,;QIU, ZAI-MING,;SUN, XIAOGUANG,
