| 摘要 |
PROBLEM TO BE SOLVED: To provide a slurry for chemical mechanical polishing capable of extremely reducing a step between an insulating film formed by silicon oxide or the like and a stopper film formed by silicon nitride or the like in a shallow-trench isolation process, and to provide a method of polishing and manufacturing a substrate. SOLUTION: The slurry for chemical mechanical polishing includes a water-soluble compound (a) having 200 to 1,000,000 weight-average molecular weight in the range of >0.5 mass% and≤10 mass%, a polishing sand particle (b), and water (c). COPYRIGHT: (C)2011,JPO&INPIT |
