发明名称 METHOD FOR CONTROLLING PARTICLE SIZE OF alpha-SILICON CARBIDE POWDER AND SILICON CARBIDE SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method for controlling the particle size ofα-silicon carbide powder for efficiently obtaining silicon carbide powder of the objective particle size, and to provide a homogeneous silicon carbide single crystal including few impurities by using theα-silicon carbide powder whose particle size is controlled by the method. SOLUTION: In the method for controlling the particle size of theα-silicon carbide powder produced by heatingβ-silicon carbide or a silicon carbide precursor in a non-oxidizing atmosphere and subjecting theβ-silicon carbide orβ-silicon carbide produced from the silicon carbide precursor to phase transition toα-silicon carbide, the temperature of phase transition from theβ-silicon carbide to theα-silicon carbide is controlled by changing the pressure of the atmosphere, so that theα-silicon carbide powder having an average particle size of≥10μm is produced. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011102205(A) 申请公布日期 2011.05.26
申请号 JP20090257114 申请日期 2009.11.10
申请人 SUMITOMO OSAKA CEMENT CO LTD 发明人 YOSHIOKA YOSHIKI
分类号 C01B31/36;C30B29/36 主分类号 C01B31/36
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