| 摘要 |
<p>Disclosed is a plasma device (100) provided with an earthed chamber (1), an outer circumferential antenna group (21) secured to the roof (11) of the chamber (1), and an inner circumferential antenna group (22) which is mounted further toward the inside than the outer circumferential antenna group (21) and is secured to the roof (11). The outer circumferential antenna group (21) contains n antennas (20) (n is an integer) which are arranged in such a way that said antennas (20) penetrate the roof (11), one antenna is located in the lateral direction of the region in which the outer circumferential antenna group (21) is mounted and at least one antenna is located in the circumferential direction of the region. The inner circumferential antenna group (22) contains m antennas (20) (m is an integer) which are arranged in such a way that said antennas (20) penetrate the roof (11). At least some of the n antennas (20) have a first end (20A - 1) to which a high-frequency current is applied, and a second earthed end (20B - 1) which is arranged more toward the chamber side wall (50A, 50B, 50C, 50D) than the first end (20A - 1).</p> |
